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    SIE882DF-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 60A POLARPAK
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
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    SIE882DF-T1-GE3 datasheet preview

    SIE882DF-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIE882DF-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
    • To ensure the SIE882DF-T1-GE3 operates within its SOA, ensure the maximum voltage rating of 100 V is not exceeded, and the maximum current rating of 2 A is not exceeded. Additionally, ensure the device is operated within the recommended temperature range of -55°C to 150°C.
    • The thermal resistance of the SIE882DF-T1-GE3 is 25°C/W (junction-to-ambient) and 10°C/W (junction-to-case).
    • Yes, the SIE882DF-T1-GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.
    • Yes, the SIE882DF-T1-GE3 is compatible with lead-free soldering processes, with a peak reflow temperature of 260°C.
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