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    Part Img SIA906EDJ-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 4.5A SC70-6
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
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    SIA906EDJ-T1-GE3 datasheet preview

    SIA906EDJ-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended storage temperature range for the SIA906EDJ-T1-GE3 is -40°C to 125°C.
    • Yes, the SIA906EDJ-T1-GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
    • The maximum power dissipation of the SIA906EDJ-T1-GE3 is 1.5 W at 25°C ambient temperature.
    • Yes, the SIA906EDJ-T1-GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications.
    • The typical junction-to-ambient thermal resistance of the SIA906EDJ-T1-GE3 is 125°C/W.
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