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    SIA445EDJ-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 12A SC-70
    • Original
    • Unknown
    • Unknown
    • Active
    • EAR99
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    SIA445EDJ-T1-GE3 datasheet preview

    SIA445EDJ-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended storage condition for SIA445EDJ-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
    • Yes, SIA445EDJ-T1-GE3 is suitable for high-reliability applications due to its high-quality materials, robust design, and rigorous testing procedures.
    • To prevent electrostatic discharge (ESD) damage, handle SIA445EDJ-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, and follow proper ESD handling procedures.
    • The recommended soldering profile for SIA445EDJ-T1-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a cooling rate of 6°C/s.
    • Yes, SIA445EDJ-T1-GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.
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