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    Part Img SI9435BDY-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.1A 8-SOIC
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    SI9435BDY-T1-GE3 datasheet preview

    SI9435BDY-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI9435BDY-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
    • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, and follow the recommended PCB layout and design guidelines.
    • The maximum allowed power dissipation for the SI9435BDY-T1-GE3 is dependent on the ambient temperature and the thermal resistance of the package. Refer to the datasheet for the power dissipation curves and thermal resistance values to determine the maximum allowed power dissipation for your specific application.
    • Yes, the SI9435BDY-T1-GE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is operated within its recommended frequency range.
    • To protect the SI9435BDY-T1-GE3 from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags or tubes, and ensure that your workspace and equipment are ESD-protected. Additionally, consider using ESD protection devices or circuits in your design.
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