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    Part Img SI9435BDY-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.1A 8-SOIC
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SI9435BDY-T1-E3 datasheet preview

    SI9435BDY-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI9435BDY-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor.
    • The SI9435BDY-T1-E3 is capable of delivering up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal performance and thermal management.
    • To protect the SI9435BDY-T1-E3 from overvoltage and undervoltage conditions, consider adding overvoltage protection (OVP) and undervoltage lockout (UVLO) circuits. You can also use a voltage supervisor IC to monitor the input voltage and reset the system if it falls outside the recommended operating range.
    • The thermal derating curve for the SI9435BDY-T1-E3 is typically provided in the datasheet. As a general guideline, the device can operate up to 125°C junction temperature. For every 10°C increase above 25°C, the output current should be derated by 10% to ensure reliable operation.
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