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    Part Img SI7956DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 150V 2.6A 8-SOIC
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com
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    SI7956DP-T1-GE3 datasheet preview

    SI7956DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7956DP-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure the SI7956DP-T1-GE3 operates within its recommended operating conditions, ensure the input voltage is between 2.7V and 5.5V, and the junction temperature is between -40°C and 125°C. Also, ensure the device is not exposed to excessive moisture or humidity.
    • The maximum allowable power dissipation for the SI7956DP-T1-GE3 is 1.4W at an ambient temperature of 25°C. However, this value may vary depending on the specific application and operating conditions.
    • Yes, the SI7956DP-T1-GE3 is suitable for high-reliability applications due to its robust design and manufacturing process. However, it is essential to follow proper design and testing procedures to ensure the device meets the required reliability standards.
    • To troubleshoot issues with the SI7956DP-T1-GE3, start by verifying the device is properly soldered and the input voltage is within the recommended range. Check for any signs of physical damage or overheating. If the issue persists, consult the datasheet and application notes or contact Vishay Intertechnologies' technical support for further assistance.
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