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    SI7922DN-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 100V 1.8A 1212-8
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
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    SI7922DN-T1-E3 datasheet preview

    SI7922DN-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7922DN-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ground. Additionally, ensure the input and output pins are not overloaded, and the device is operated within the recommended temperature range.
    • The maximum allowed power dissipation for the SI7922DN-T1-E3 is 1.4W. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
    • The SI7922DN-T1-E3 is rated for operation up to 125°C. However, it's essential to consider the device's power dissipation and thermal resistance when operating in high-temperature environments. Ensure proper heat sinking and thermal management to prevent overheating.
    • To troubleshoot issues with the SI7922DN-T1-E3, start by verifying the input voltage and output voltage levels. Check for proper decoupling, and ensure the device is operated within the recommended temperature range. If issues persist, consult the datasheet and application notes or contact Vishay Intertechnologies' technical support for further assistance.
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