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    SI7904DN-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.3A 1212-8
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    SI7904DN-T1-E3 datasheet preview

    SI7904DN-T1-E3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI7904DN-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
    • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate airflow, using a heat sink, and keeping the device within its specified operating temperature range (up to 150°C).
    • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within its specified temperature range to maintain reliability and performance.
    • To handle ESD protection for the SI7904DN-T1-E3, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap, ESD mat, or ESD bag. Additionally, consider incorporating ESD protection devices, such as TVS diodes or ESD arrays, into the circuit design.
    • When paralleling multiple SI7904DN-T1-E3 devices, it's essential to ensure that each device has its own separate gate drive circuitry and that the devices are properly synchronized to prevent shoot-through currents. Additionally, consider the impact of paralleling on the overall system's thermal management and power distribution.
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