The recommended PCB footprint for the SI7904BDN-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
To ensure proper biasing, the SI7904BDN-T1-GE3 requires a supply voltage (VCC) between 2.7V and 5.5V, and a bias current (Ib) of 1mA to 10mA. The device should be operated within the recommended operating conditions specified in the datasheet.
The maximum power dissipation of the SI7904BDN-T1-GE3 is 250mW. However, the actual power dissipation depends on the operating conditions, such as supply voltage, bias current, and ambient temperature. It is essential to ensure the device operates within the recommended operating conditions to prevent overheating.
The SI7904BDN-T1-GE3 is a general-purpose N-channel MOSFET, and its frequency response is limited to around 100kHz. For high-frequency applications, a more specialized MOSFET or a different device type may be required.
The safe operating area (SOA) of the SI7904BDN-T1-GE3 is defined by the maximum drain-source voltage (Vds) of 30V, maximum drain current (Id) of 2.5A, and maximum power dissipation of 250mW. Operating the device within the SOA ensures reliable operation and prevents damage.
