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    SI7810DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.4A 1212-8
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
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    SI7810DN-T1-GE3 datasheet preview

    SI7810DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7810DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the EN pin to a logic-level signal (e.g., 0V or VIN) to enable or disable the device. Additionally, decouple the VIN pin with a 1uF ceramic capacitor to minimize noise and ensure stable operation.
    • The maximum allowed power dissipation for the SI7810DN-T1-GE3 is 1.4W at an ambient temperature of 25°C. However, it's essential to consider the thermal resistance of the package (θJA = 125°C/W) and the PCB's thermal design to ensure the device operates within its recommended temperature range.
    • The SI7810DN-T1-GE3 is rated for operation up to 125°C. However, the device's performance and reliability may degrade at higher temperatures. It's essential to consider the application's temperature profile and ensure the device operates within its recommended temperature range to maintain optimal performance and reliability.
    • To protect the SI7810DN-T1-GE3 from ESD and overvoltage events, consider adding external protection components such as TVS diodes or ESD protection devices on the input pins. Additionally, ensure the PCB design includes adequate clearance and creepage distances to prevent electrical overstress.
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