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    SI7810DN-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.4A 1212-8
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SI7810DN-T1-E3 datasheet preview

    SI7810DN-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7810DN-T1-E3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The enable pin (EN) should be tied to VIN or a logic signal for proper operation. Additionally, decouple the input with a 1uF ceramic capacitor to minimize noise and ripple.
    • The SI7810DN-T1-E3 is rated for operation in ambient temperatures ranging from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures. It's essential to ensure proper thermal management and heat dissipation in your design.
    • Yes, the SI7810DN-T1-E3 is AEC-Q100 qualified, making it suitable for automotive and high-reliability applications. However, it's essential to consult with Vishay Intertechnologies or an authorized distributor for specific requirements and documentation.
    • To prevent electrostatic discharge (ESD) damage, handle the SI7810DN-T1-E3 with ESD-protective equipment, such as wrist straps or mats. Ensure your workspace is ESD-safe, and avoid touching the device's pins or exposed internal components.
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