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    Part Img SI7686DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A PPAK 8SOIC
    • Original
    • Unknown
    • Yes
    • Not Recommended
    • EAR99
    • Find it at Findchips.com

    SI7686DP-T1-GE3 datasheet preview

    SI7686DP-T1-GE3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI7686DP-T1-GE3 should consider the following: keep the input and output traces short and symmetrical, use a solid ground plane, and place decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
    • The SI7686DP-T1-GE3 requires a stable power supply with a voltage range of 2.5V to 5.5V. Ensure the power supply is decoupled with a 10uF capacitor and a 100nF capacitor in parallel, placed close to the device. Also, make sure the power supply can provide enough current to support the device's operating current.
    • The SI7686DP-T1-GE3 can operate with a clock frequency up to 100MHz. However, the recommended clock frequency is 25MHz to 50MHz for optimal performance and to minimize power consumption.
    • The SI7686DP-T1-GE3 can be configured for either I2C or SPI interface by setting the MODE pin accordingly. For I2C, tie the MODE pin to VCC, and for SPI, tie it to GND. Additionally, ensure the correct pin connections and bus configuration for the chosen interface.
    • The SI7686DP-T1-GE3 has an operating temperature range of -40°C to 125°C. However, the device's performance and accuracy may degrade at extreme temperatures. Ensure proper thermal management and consider the device's thermal characteristics during system design.
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