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    Part Img SI7635DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 40A 8-SOIC
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SI7635DP-T1-GE3 datasheet preview

    SI7635DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7635DP-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
    • The SI7635DP-T1-GE3 is capable of delivering up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal performance and to prevent overheating.
    • To protect the SI7635DP-T1-GE3 from overvoltage and undervoltage conditions, add a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended operating range.
    • The thermal derating curve for the SI7635DP-T1-GE3 is typically 1.5% per degree Celsius above 25°C. This means that for every 1°C increase in temperature above 25°C, the maximum output current capability decreases by 1.5%.
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