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    Part Img SI7489DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 28A PPAK 8SOIC
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com

    SI7489DP-T1-GE3 datasheet preview

    SI7489DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7489DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
    • The SI7489DP-T1-GE3 is capable of delivering up to 1A of continuous output current. However, it's recommended to derate the output current to 0.8A for optimal reliability and thermal performance.
    • The SI7489DP-T1-GE3 has built-in input voltage transient protection and noise filtering. However, it's still recommended to add external input capacitors (e.g., 10uF ceramic) to further reduce noise and ripple.
    • The thermal resistance (RθJA) of the SI7489DP-T1-GE3 package is approximately 150°C/W. This means that for every watt of power dissipation, the junction temperature will increase by 150°C above the ambient temperature.
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