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    Part Img SI7478DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 15A PPAK 8SOIC
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
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    SI7478DP-T1-GE3 datasheet preview

    SI7478DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7478DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
    • The SI7478DP-T1-GE3 is capable of delivering up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal performance and to prevent overheating.
    • To protect the SI7478DP-T1-GE3 from overvoltage and undervoltage conditions, add a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended operating range (2.5V to 5.5V).
    • The thermal derating curve for the SI7478DP-T1-GE3 is typically 1.5mA/°C above 25°C. This means that for every 1°C increase in temperature above 25°C, the maximum output current should be reduced by 1.5mA to prevent overheating.
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