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    Part Img SI7464DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.8A 8-SOIC
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
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    SI7464DP-T1-GE3 datasheet preview

    SI7464DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7464DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
    • The SI7464DP-T1-GE3 is capable of delivering up to 1A of continuous output current. However, it's recommended to derate the output current to 0.8A for optimal reliability and thermal performance.
    • To protect the SI7464DP-T1-GE3 from overvoltage and undervoltage conditions, consider adding a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended operating range.
    • The thermal resistance of the SI7464DP-T1-GE3 package is approximately 120°C/W (junction-to-ambient) and 30°C/W (junction-to-case). Proper thermal design and heat sinking are recommended to ensure reliable operation.
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