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    Part Img SI7464DP-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.8A PPAK 8SOIC
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
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    SI7464DP-T1-E3 datasheet preview

    SI7464DP-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7464DP-T1-E3 is a standard SO-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN-1033.
    • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the Vishay Intertechnologies' application note AN-1033. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
    • The maximum allowed power dissipation for the SI7464DP-T1-E3 is 1.4W at an ambient temperature of 25°C. However, this value can be derated based on the operating temperature and PCB design. Refer to the datasheet for more information.
    • Yes, the SI7464DP-T1-E3 is qualified for automotive and high-reliability applications. It meets the AEC-Q101 qualification standard and is PPAP capable. However, it's essential to consult with Vishay Intertechnologies' sales team to ensure the device meets the specific requirements of your application.
    • To prevent electrostatic discharge (ESD) damage, handle the SI7464DP-T1-E3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure the workspace is ESD-safe, and follow proper handling and storage procedures.
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