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    SI7309DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 8A 1212-8 PPAK
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
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    SI7309DN-T1-GE3 datasheet preview

    SI7309DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7309DN-T1-GE3 is a 5x5 mm QFN package with a 0.5 mm pitch. A detailed footprint recommendation can be found in the Vishay Intertechnologies application note AN81142.
    • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies application note AN81142. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
    • The SI7309DN-T1-GE3 has an operating temperature range of -40°C to 125°C. However, the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.
    • Yes, the SI7309DN-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q100 standard and is PPAP capable. However, additional testing and validation may be required for specific applications.
    • To prevent ESD damage, handle the SI7309DN-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the device is stored in a conductive bag or tube when not in use.
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