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    SI7212DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 4.9A 1212-8
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
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    SI7212DN-T1-GE3 datasheet preview

    SI7212DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7212DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the VCC pin with a 10nF to 100nF capacitor to reduce noise and ensure stable operation.
    • The maximum allowed current through the SI7212DN-T1-GE3's output pins is 20mA. Exceeding this limit may cause damage to the device or affect its reliability.
    • To protect the SI7212DN-T1-GE3 from ESD and overvoltage, use a TVS diode or a transient voltage suppressor on the input pins. Additionally, consider adding a series resistor and a capacitor to the input pins to filter out noise and transients.
    • The SI7212DN-T1-GE3 is rated for operation from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures. Ensure proper thermal management and consider derating the device's specifications for high-temperature applications.
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