Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI7212DN-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 4.9A 1212-8
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
    • Powered by Findchips Logo Findchips

    SI7212DN-T1-E3 datasheet preview

    SI7212DN-T1-E3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI7212DN-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device. This helps to reduce thermal resistance and ensures efficient heat dissipation.
    • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate airflow, using a heat sink, and ensuring the device is properly mounted and soldered. Additionally, consider derating the device's power handling capabilities according to the ambient temperature.
    • The recommended soldering conditions for the SI7212DN-T1-E3 are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. It's also essential to follow the recommended soldering profile and use a solder with a melting point above 217°C.
    • To protect the SI7212DN-T1-E3 from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and personnel are properly grounded. Additionally, consider using ESD-protection devices or circuits in the system design.
    • The SI7212DN-T1-E3 has a TID radiation tolerance of 100 krad(Si). This means the device can withstand a total ionizing dose of 100 krad(Si) without significant degradation. However, it's essential to consider the specific radiation environment and potential single-event effects (SEEs) when designing systems for high-reliability applications.
    Supplyframe Tracking Pixel