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    Part Img SI7178DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A PPAK 8SOIC
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SI7178DP-T1-GE3 datasheet preview

    SI7178DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7178DP-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
    • To ensure proper biasing, connect the input pins (VIN and VCC) to a stable voltage source, and decouple the power supply lines with 10 uF and 100 nF capacitors. Additionally, ensure the output pin (VOUT) is connected to a load impedance of at least 1 kΩ.
    • The SI7178DP-T1-GE3 is rated for operation from -40°C to 150°C (junction temperature). However, for optimal performance and reliability, it is recommended to operate the device within the -20°C to 125°C range.
    • Yes, the SI7178DP-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is manufactured with a high-reliability process.
    • The SI7178DP-T1-GE3 has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.
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