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    SI7114DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11.7A 1212-8
    • Original
    • Yes
    • Yes
    • Not Recommended
    • EAR99
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    SI7114DN-T1-GE3 datasheet preview

    SI7114DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7114DN-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
    • To ensure proper biasing, connect the VCC pin to a stable 2.5 V to 5.5 V power supply, and the GND pin to a solid ground plane. The input pins (IN+ and IN-) should be biased to a voltage within the common-mode range (VCC - 1.5 V to VCC + 0.5 V) for optimal performance.
    • The maximum allowable power dissipation for the SI7114DN-T1-GE3 is 250 mW, which is calculated based on the package thermal resistance (RθJA) of 125°C/W and the maximum junction temperature (TJ) of 150°C.
    • To protect the SI7114DN-T1-GE3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB has adequate ESD protection, such as TVS diodes or ESD protection arrays, on the input and output lines.
    • The recommended operating temperature range for the SI7114DN-T1-GE3 is -40°C to 125°C, with a maximum junction temperature (TJ) of 150°C.
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