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    SI7114ADN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A PPAK 1212-8
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com
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    SI7114ADN-T1-GE3 datasheet preview

    SI7114ADN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7114ADN-T1-GE3 is a 5x5 mm QFN package with a 0.5 mm pitch. A minimum of 2 mm clearance around the device is recommended for thermal and electrical considerations.
    • To ensure the device operates within the specified junction temperature (Tj) range, provide adequate heat sinking, use a thermal interface material (TIM) between the device and the heat sink, and ensure good airflow around the device.
    • The recommended input capacitance value for the SI7114ADN-T1-GE3 is 10 nF to 100 nF, depending on the specific application and noise requirements. A higher capacitance value can help reduce noise and improve stability.
    • Yes, the SI7114ADN-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q100 and is manufactured in accordance with IATF 16949.
    • Handle the device by the package body only, avoiding touching the leads or electrical contacts. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and handling procedures to prevent electrostatic discharge (ESD) damage.
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