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    SI7110DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 13.5A 1212-8
    • Original
    • Unknown
    • Yes
    • Not Recommended
    • EAR99
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    SI7110DN-T1-GE3 datasheet preview

    SI7110DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI7110DN-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
    • To ensure proper biasing, connect the VCC pin to a stable 2.5 V to 5.5 V power supply, and the GND pin to a solid ground plane. The input pins (IN+ and IN-) should be biased to a voltage within the common-mode range (VCC - 1.5 V to VCC + 0.5 V) for optimal performance.
    • The maximum allowable power dissipation for the SI7110DN-T1-GE3 is 250 mW, which is limited by the package thermal resistance (θJA) of 125°C/W. Ensure that the device is properly heat-sinked and operated within the recommended temperature range to avoid thermal shutdown.
    • While the SI7110DN-T1-GE3 is rated for operation up to 125°C, it's essential to consider the device's thermal derating and ensure that the junction temperature (TJ) does not exceed 150°C. Consult the datasheet for thermal derating curves and take necessary precautions to prevent overheating.
    • To protect the SI7110DN-T1-GE3 from ESD, handle the device with anti-static wrist straps, mats, or bags. Ensure that the PCB design includes ESD protection diodes or resistors on the input pins, and consider adding a TVS (transient voltage suppressor) diode for additional protection.
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