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    SI5935CDC-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4A 1206-8
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    SI5935CDC-T1-GE3 datasheet preview

    SI5935CDC-T1-GE3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI5935CDC-T1-GE3 should include a solid ground plane, wide power traces, and thermal vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • To ensure the device operates within the SOA, monitor the junction temperature, voltage, and current. Use the thermal resistance (RθJA) and power dissipation (PD) ratings to calculate the maximum allowable temperature rise. Implement thermal management techniques, such as heat sinks or thermal interfaces, if necessary.
    • The SI5935CDC-T1-GE3 has built-in ESD protection, but handling precautions are still necessary. Use an ESD wrist strap or mat, and handle the device by the body or leads, avoiding direct contact with the die. Store the device in an anti-static bag or container.
    • The SI5935CDC-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper design, testing, and validation. Consult with Vishay Intertechnologies for specific requirements and recommendations.
    • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30s, and time above 183°C 90s. For rework, use a low-temperature soldering iron (<350°C) and avoid applying excessive force or heat to the device.
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