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    SI5933DC-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 2.7A 1206-8
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    SI5933DC-T1-E3 datasheet preview

    SI5933DC-T1-E3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI5933DC-T1-E3 should include a solid ground plane, short and wide traces for the high-frequency signals, and a decoupling capacitor close to the device. Additionally, the input and output pins should be separated to minimize crosstalk.
    • To ensure proper biasing, the SI5933DC-T1-E3 requires a stable voltage supply, typically between 2.5V and 5.5V. The device also requires a bias resistor (RBIAS) connected between the VCC pin and the input pin to set the bias current. The recommended RBIAS value is 1kΩ to 10kΩ.
    • The SI5933DC-T1-E3 has an operating temperature range of -40°C to +125°C. However, the device's performance may degrade at extreme temperatures, and the maximum junction temperature should not exceed 150°C.
    • The SI5933DC-T1-E3 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using an ESD wrist strap, ESD mat, and ESD-safe packaging materials.
    • The recommended soldering profile for the SI5933DC-T1-E3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds. The device is also compatible with lead-free soldering processes.
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