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    SI5913DC-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4A 1206-8
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
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    SI5913DC-T1-GE3 datasheet preview

    SI5913DC-T1-GE3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI5913DC-T1-GE3 should include a solid ground plane, short and wide traces for the high-frequency signals, and a decoupling capacitor (e.g., 100nF) close to the device. Additionally, keep the input and output traces separate to minimize crosstalk.
    • To ensure proper biasing, connect the VCC pin to a stable 3.3V or 5V power supply, and the GND pin to a solid ground plane. The EN pin should be tied to VCC or a digital signal for enable/disable control. The VIN pin should be connected to a stable input voltage within the specified range.
    • The SI5913DC-T1-GE3 is rated for operation from -40°C to +125°C, making it suitable for a wide range of industrial and automotive applications.
    • To protect the SI5913DC-T1-GE3 from ESD and other transient events, use TVS diodes or ESD protection devices on the input and output lines. Additionally, ensure that the PCB design includes adequate clearance and creepage distances to prevent electrical overstress.
    • The typical rise and fall time of the output signal for the SI5913DC-T1-GE3 is around 1ns to 2ns, making it suitable for high-speed applications.
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