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    SI5902DC-T1-E3 datasheet by Vishay Siliconix

    • MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.9A; On-Resistance, Rds(on):0.143ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263; Leaded Process Compatible:Yes
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    SI5902DC-T1-E3 datasheet preview

    SI5902DC-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB layout for the SI5902DC-T1-E3 involves keeping the input and output traces as short as possible, using a solid ground plane, and placing a 10nF to 100nF bypass capacitor between the VIN pin and the GND pin. Additionally, it's recommended to use a Kelvin connection for the sense pins to minimize parasitic inductance.
    • To ensure proper thermal management, the SI5902DC-T1-E3 should be mounted on a PCB with a thermal pad connected to a solid ground plane. The device should also be placed in a location with good airflow, and a heat sink can be added if necessary. The maximum junction temperature (TJ) should not exceed 150°C.
    • The recommended input capacitor value is 10uF to 100uF, and it should be a low-ESR ceramic capacitor (X5R or X7R dielectric) with a voltage rating of at least 2x the input voltage. This helps to filter out high-frequency noise and ensure stable operation.
    • To protect the SI5902DC-T1-E3 from overvoltage and undervoltage conditions, it's recommended to add a voltage supervisor or a voltage monitor IC that can detect and respond to out-of-range voltage conditions. Additionally, a TVS diode or a zener diode can be used to clamp the input voltage to a safe level.
    • The recommended output capacitor value is 10uF to 100uF, and it should be a low-ESR ceramic capacitor (X5R or X7R dielectric) with a voltage rating of at least 2x the output voltage. This helps to filter out high-frequency noise and ensure stable operation.
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