Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI5902BDC-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 4A 1206-8
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Powered by Findchips Logo Findchips
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    SI5902BDC-T1-GE3 datasheet preview

    SI5902BDC-T1-GE3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI5902BDC-T1-GE3 should include a solid ground plane, wide power traces, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
    • To ensure proper biasing, the device should be operated within the recommended voltage range (VCC = 2.5V to 5.5V) and the input voltage (VIN) should be within the specified range (0.8V to 5.5V). Additionally, the input voltage should be decoupled with a 10uF capacitor to minimize noise.
    • The maximum allowable power dissipation for the SI5902BDC-T1-GE3 is 1.4W. Exceeding this limit can cause the device to overheat and potentially fail.
    • To protect the device from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the pins or leads during handling.
    • The recommended operating temperature range for the SI5902BDC-T1-GE3 is -40°C to 125°C. Operating the device outside of this range can affect its performance and reliability.
    Supplyframe Tracking Pixel