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    Part Img SI4925BDY-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 5.3A 8-SOIC
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SI4925BDY-T1-GE3 datasheet preview

    SI4925BDY-T1-GE3 Frequently Asked Questions (FAQs)

    • A recommended PCB layout for optimal thermal performance would be to use a large copper pad under the device, connected to a solid ground plane, and to use thermal vias to dissipate heat. Additionally, keeping the component placement and routing symmetrical can help reduce thermal gradients.
    • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material. Additionally, consider using a thermocouple or temperature sensor to monitor the device temperature.
    • The SI4925BDY-T1-GE3 has built-in ESD protection, but it's still essential to follow standard ESD handling precautions, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging. Avoid touching the device pins or handling the device in a way that could generate static electricity.
    • The SI4925BDY-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or aerospace applications with proper qualification and testing. It's essential to consult with Vishay Intertechnologies and follow their guidelines for using commercial-grade devices in high-reliability applications.
    • The recommended soldering conditions for the SI4925BDY-T1-GE3 are a peak temperature of 260°C, with a soldering time of 10-15 seconds. For rework, use a low-temperature soldering iron (around 200°C) and avoid applying excessive heat or force, which can damage the device.
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