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    Part Img SI4900DY-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 5.3A 8-SOIC
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    SI4900DY-T1-GE3 datasheet preview

    SI4900DY-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper thickness, and ensuring good thermal conduction to the surrounding copper area. A thermal via array can also be used to improve heat dissipation.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
    • The SI4900DY-T1-GE3 has built-in ESD protection, but it's still important to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and avoiding direct contact with the device pins.
    • The SI4900DY-T1-GE3 is a commercial-grade device, but Vishay Siliconix offers other versions with enhanced reliability and automotive-grade options. Consult with Vishay's application engineers or review their documentation for specific requirements and recommendations.
    • To troubleshoot and debug issues with the SI4900DY-T1-GE3, start by reviewing the datasheet and application notes, then use standard debugging techniques such as signal probing, voltage measurement, and logic analysis. Consult with Vishay's application engineers or online forums for additional guidance.
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