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    Part Img SI4890DY-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A 8-SOIC
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    SI4890DY-T1-E3 datasheet preview

    SI4890DY-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for SI4890DY-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a maximum pad size of 1.2mm x 1.2mm, with a 0.5mm spacing between pads.
    • To ensure reliability in high-temperature applications, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and avoiding excessive power dissipation. Additionally, the device should be operated within its specified temperature range of -55°C to 150°C.
    • The maximum allowed voltage on the enable pin (EN) of the SI4890DY-T1-E3 is 6V, which is the maximum rating for the logic input voltage. Exceeding this voltage may cause damage to the device.
    • Yes, the SI4890DY-T1-E3 is suitable for use in switching regulator applications due to its high-frequency capability and low RDS(on) characteristics. However, it is essential to ensure that the device is operated within its specified power dissipation limits and that proper thermal management is implemented.
    • To calculate the power dissipation of the SI4890DY-T1-E3, you need to consider the voltage drop across the device, the current flowing through it, and the operating frequency. The power dissipation can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs) + (f x Ciss x Vds^2), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, Igs is the gate-source current, f is the operating frequency, and Ciss is the input capacitance.
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