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    Part Img SI4500BDY-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6.6A 8-SOIC
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    SI4500BDY-T1-GE3 datasheet preview

    SI4500BDY-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI4500BDY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
    • To ensure reliability in high-temperature applications, it's recommended to follow Vishay's guidelines for derating the device's power dissipation, using a heat sink if necessary, and ensuring good thermal conductivity between the device and the PCB.
    • The maximum allowed voltage on the enable pin (EN) of the SI4500BDY-T1-GE3 is 6 V, which is the maximum rating for the logic input voltage.
    • Yes, the SI4500BDY-T1-GE3 is suitable for switching regulator applications due to its high-frequency capability, low RDS(on), and low gate charge. However, it's essential to ensure that the device is properly driven and that the switching frequency is within the recommended range.
    • To calculate the power dissipation of the SI4500BDY-T1-GE3, you need to consider the device's RDS(on), the operating frequency, the input voltage, and the output current. You can use Vishay's power dissipation calculator or consult the application notes for guidance.
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