Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img SI4453DY-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SI4453DY-T1-E3 datasheet preview

    SI4453DY-T1-E3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI4453DY-T1-E3 should include a solid ground plane, short and wide traces for the high-frequency signals, and a decoupling capacitor (e.g., 100nF) close to the device. Additionally, keep the input and output traces separate to minimize crosstalk.
    • To ensure proper biasing, make sure to provide a stable voltage supply (VCC) within the recommended range (1.8V to 3.6V). Also, ensure the input voltage (VIN) is within the specified range (0.9V to 1.1V) and the output voltage (VOUT) is within the desired range (0.8V to 3.3V).
    • The SI4453DY-T1-E3 can tolerate an input voltage ripple of up to 100mV peak-to-peak. Exceeding this limit may affect the device's performance and stability.
    • The SI4453DY-T1-E3 has a thermal pad on the bottom of the package. Ensure good thermal conductivity by using a thermal via or a thermal pad on the PCB. Also, keep the device away from heat sources and ensure good airflow around the device.
    • A 10uF to 22uF ceramic capacitor (X5R or X7R type) is recommended for the input capacitor (CIN). This value helps to filter out high-frequency noise and ensures stable operation.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel