The recommended PCB footprint for the SI4160DY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.
To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum equivalent series resistance (ESR) of 1 ohm. Additionally, the input capacitance should be at least 1uF with an ESR of 0.1 ohm.
The maximum junction temperature for the SI4160DY-T1-GE3 is 150°C. It is recommended to keep the junction temperature below 125°C for optimal performance and reliability.
Yes, the SI4160DY-T1-GE3 is rated for operation up to 125°C, making it suitable for high-temperature environments. However, it is recommended to derate the output current and voltage according to the temperature derating curve in the datasheet.
The power dissipation of the SI4160DY-T1-GE3 can be calculated using the formula: Pd = (Vin - Vout) x Iout + (Vin x Iq), where Vin is the input voltage, Vout is the output voltage, Iout is the output current, and Iq is the quiescent current.
SI4160DY-T1-GE3 datasheet
by Vishay Siliconix
