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    Part Img SI3585CDV-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.9A 6TSOP
    • Original
    • Unknown
    • Unknown
    • Active
    • EAR99
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    SI3585CDV-T1-GE3 datasheet preview

    SI3585CDV-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI3585CDV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source, and the enable pin (EN) to a logic-level signal. The output pin (VOUT) should be decoupled with a 10 μF ceramic capacitor and a 1 μF ceramic capacitor in parallel.
    • The SI3585CDV-T1-GE3 is rated for operation in an ambient temperature range of -40°C to +125°C.
    • Yes, the SI3585CDV-T1-GE3 is qualified to AEC-Q100 Grade 1, making it suitable for high-reliability applications such as automotive and industrial systems.
    • To prevent ESD damage, handle the SI3585CDV-T1-GE3 with an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.
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