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    Part Img SI3430DV-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.8A 6-TSOP
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    SI3430DV-T1-GE3 datasheet preview

    SI3430DV-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI3430DV-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
    • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the VOUT pin to a capacitor with a value between 1uF and 10uF. The EN pin should be tied to VIN or a logic signal for enable/disable functionality.
    • The SI3430DV-T1-GE3 is rated for operation in ambient temperatures ranging from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures.
    • Yes, the SI3430DV-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the required specifications.
    • To prevent electrostatic discharge (ESD) damage, handle the SI3430DV-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in environments with high electrostatic potential.
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