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    Part Img SI2303CDS-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.7A SOT23-3
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com

    SI2303CDS-T1-GE3 datasheet preview

    SI2303CDS-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI2303CDS-T1-GE3 is a 6-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
    • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source, and the enable pin (EN) to a logic-level signal. The output pin (VOUT) should be decoupled with a 10 μF ceramic capacitor.
    • The SI2303CDS-T1-GE3 is rated for operation in an ambient temperature range of -40°C to +125°C.
    • Yes, the SI2303CDS-T1-GE3 is qualified to AEC-Q100, making it suitable for high-reliability applications such as automotive and industrial systems.
    • To calculate power dissipation, use the formula: Pd = (VIN - VOUT) x IOUT. Ensure the calculated power dissipation does not exceed the maximum rating of 1.5 W.
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