SI2302DS,215 datasheet
by NXP Semiconductors
- N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 2.5 A; Q<sub>gd</sub> (typ): 1.6 nC; R<sub>DS(on)</sub>: 85@4.5V115@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
- Original
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