The recommended PCB footprint for the SI1965DH-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this includes a supply voltage (VCC) of 2.5V to 5.5V, and a bias current (IB) of 1mA to 10mA. Consult the datasheet for specific biasing requirements.
The maximum power dissipation for the SI1965DH-T1-GE3 is typically 1.4W at an ambient temperature of 25°C. However, this value may vary depending on the specific application and operating conditions. Consult the datasheet for thermal resistance and power dissipation guidelines.
To prevent electrostatic discharge (ESD) damage, handle the SI1965DH-T1-GE3 with proper ESD precautions, such as using an ESD wrist strap, mat, or workstation. Follow standard ESD handling procedures to prevent damage to the device.
The operating temperature range for the SI1965DH-T1-GE3 is -40°C to 125°C. However, the device may be rated for a specific temperature range depending on the application and operating conditions. Consult the datasheet for specific temperature ratings.
SI1965DH-T1-GE3 datasheet
by Vishay Siliconix
