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    Part Img SI1965DH-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 1.3A SC70-6
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com
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    SI1965DH-T1-E3 datasheet preview

    SI1965DH-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI1965DH-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
    • To ensure proper biasing, connect the input pin (pin 1) to a voltage source between 2.7 V and 5.5 V, and the enable pin (pin 5) to a logic high (VCC) or a pull-up resistor to VCC. The output pin (pin 2) should be connected to a load or a pull-down resistor to GND.
    • The SI1965DH-T1-E3 has an operating temperature range of -40°C to +125°C, with a junction temperature (TJ) of up to 150°C.
    • To prevent electrostatic discharge (ESD) damage, handle the SI1965DH-T1-E3 with an ESD wrist strap or mat, and ensure that the PCB and components are properly grounded. Avoid touching the device pins or handling the device in a way that could generate static electricity.
    • Store the SI1965DH-T1-E3 in a dry, cool place with a relative humidity of 60% or less, and at a temperature between -40°C and +30°C. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.
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