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    Part Img SI1926DL-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 370MA SOT363
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    SI1926DL-T1-GE3 datasheet preview

    SI1926DL-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended land pattern for the SI1926DL-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for QFN Packages' (document number 37942).
    • The thermal pad on the SI1926DL-T1-GE3 should be connected to a solid ground plane to ensure optimal thermal performance. A thermal via or a thermal pad connection to the ground plane is recommended.
    • The maximum operating temperature range for the SI1926DL-T1-GE3 is -40°C to 150°C. However, the device can be operated up to 175°C for a limited time (less than 1000 hours) with reduced performance and reliability.
    • Yes, the SI1926DL-T1-GE3 is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it is essential to follow proper design, manufacturing, and testing procedures to ensure the device meets the required reliability standards.
    • To ensure proper soldering of the SI1926DL-T1-GE3, follow the recommended soldering profile and use a solder with a melting point below 260°C. The device should be soldered using a reflow soldering process with a peak temperature of 245°C ± 5°C.
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