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    Part Img SI1905DL-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 570MA SC70-6
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    SI1905DL-T1-E3 datasheet preview

    SI1905DL-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for SI1905DL-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a maximum pad size of 1.2mm x 1.2mm, with a 0.5mm spacing between pads.
    • To ensure reliable operation of SI1905DL-T1-E3 in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the device within its specified operating temperature range of -40°C to 150°C.
    • The maximum allowed voltage on the enable pin (EN) of SI1905DL-T1-E3 is 6V, which is the maximum rating for the logic input voltage. Exceeding this voltage may cause damage to the device.
    • Yes, SI1905DL-T1-E3 can be used in switching regulator applications due to its high-frequency switching capability and low RDS(on) of 10.5mΩ. However, it is essential to ensure that the device is operated within its specified ratings and that proper thermal management is implemented.
    • To calculate the power dissipation of SI1905DL-T1-E3, you can use the following formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. You can find the values for these parameters in the datasheet or by consulting with a Vishay Intertechnologies representative.
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