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    Part Img SI1416EDH-T1-GE3 datasheet by Vishay Siliconix

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 3.9A SOT-363
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    • EAR99
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    SI1416EDH-T1-GE3 datasheet preview

    SI1416EDH-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI1416EDH-T1-GE3 is a 3x3mm QFN package with a 0.5mm pitch. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
    • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate thermal management, such as heat sinks or thermal pads, to prevent overheating.
    • The recommended input capacitance for the SI1416EDH-T1-GE3 is 10nF to 100nF. This range provides a good balance between noise filtering and signal integrity.
    • Yes, the SI1416EDH-T1-GE3 is suitable for high-frequency applications up to 1GHz. However, ensure that the PCB layout and component selection are optimized for high-frequency operation to minimize signal loss and distortion.
    • The SI1416EDH-T1-GE3 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use ESD-safe materials, grounding straps, and wrist straps to prevent damage from static electricity.
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