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    Part Img SI1305DL-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    SI1305DL-T1-E3 datasheet preview

    SI1305DL-T1-E3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI1305DL-T1-E3 should include a solid ground plane, short and wide traces for the high-frequency signals, and a decoupling capacitor (e.g., 100nF) close to the device. Additionally, keep the input and output traces separate to minimize crosstalk.
    • The SI1305DL-T1-E3 is rated for operation from -40°C to 125°C. Ensure proper thermal management by providing adequate heat dissipation, using a heat sink if necessary, and avoiding high ambient temperatures. Monitor the device's junction temperature (TJ) to prevent overheating.
    • Although the datasheet specifies a maximum input voltage of 5.5V, it's recommended to operate the SI1305DL-T1-E3 within the 4.5V to 5.5V range to ensure optimal performance and minimize power consumption.
    • The SI1305DL-T1-E3 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap, mat, or workstation, and ensure that all equipment is properly grounded.
    • The rise and fall times for the SI1305DL-T1-E3 output signal are typically around 1ns to 2ns, depending on the load capacitance and operating conditions. This information is not explicitly stated in the datasheet, but it can be inferred from the device's switching characteristics.
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