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    Part Img SI1025X-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 60V 190MA SC-89
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com

    SI1025X-T1-GE3 datasheet preview

    SI1025X-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI1025X-T1-GE3 is a standard SOT23-6 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
    • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.7V and 5.5V, and the EN pin to a logic-level signal (e.g., 0V or VIN) to enable or disable the device. Additionally, decouple the VIN pin with a 1uF ceramic capacitor to minimize noise.
    • The maximum allowable power dissipation for the SI1025X-T1-GE3 is 1.4W at an ambient temperature of 25°C. However, it's essential to consider the thermal resistance of the package (θJA = 125°C/W) and the PCB's thermal design to ensure reliable operation.
    • The SI1025X-T1-GE3 is rated for operation up to 125°C. However, the device's performance and reliability may degrade at higher temperatures. It's essential to consider the application's temperature profile and potential thermal stress when designing with this device.
    • To protect the SI1025X-T1-GE3 from ESD, handle the device by the body or pins, avoid touching the pins, and use an ESD wrist strap or mat during assembly. Additionally, ensure the PCB design includes ESD protection components, such as TVS diodes or ESD arrays, to prevent damage from external ESD events.
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