A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces short and away from digital signals. Use a 50-ohm microstrip line for the RF output.
Use a high-quality crystal with a load capacitance of 10-20 pF. Ensure the crystal is properly connected to the IC, and the oscillator circuit is decoupled from the power supply. A 1-kohm resistor in series with the crystal can help improve startup reliability.
The SA58631TK,157 is designed for low-power applications, and the maximum transmit power is typically limited to around 10 dBm (10 mW). However, the actual power output may vary depending on the specific application, antenna, and regulatory requirements.
The SA58631TK,157 does not have built-in frequency hopping or spread spectrum capabilities. However, you can implement these features using an external microcontroller or FPGA to control the device's frequency synthesizer and modulation settings.
The SA58631TK,157 is specified to operate from -40°C to +85°C. However, the device's performance and reliability may degrade at extreme temperatures. Ensure proper thermal design and heat dissipation to maintain optimal performance.
SA58631TK,157 datasheet
by NXP Semiconductors
