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    S29VS064RABBHW010 datasheet by Cypress Semiconductor

    • Integrated Circuits (ICs) - Memory - IC FLASH 64M PARALLEL 44FBGA
    • Original
    • Yes
    • Unknown
    • Obsolete
    • 3A991.B.1.A
    • 8542.32.00.51
    • 8542.32.00.50
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    S29VS064RABBHW010 datasheet preview

    S29VS064RABBHW010 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the S29VS064RABBHW010 is -40°C to +85°C.
    • During power-up, HOLD# should be kept high until the device is fully powered up and the internal reset is released. During power-down, HOLD# should be kept low to prevent any unwanted writes or accesses to the device.
    • The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. The order of applying VCC and VPP is not critical, but VCC should be stable before applying the clock signal.
    • The optimal value for VPP depends on the specific application and operating conditions. As a general guideline, VPP should be set to the same voltage as VCC or slightly higher (up to 1.5V) for optimal performance and reliability.
    • The WP# signal is used to protect the device from unwanted writes or erases. When WP# is low, the device is in write-protect mode, and any write or erase operations will be ignored.
    Supplyframe Tracking Pixel