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    S29GL01GS10FAI010 datasheet by Cypress Semiconductor

    • Integrated Circuits (ICs) - Memory - IC FLASH 1G PARALLEL 64BGA
    • Original
    • No
    • Unknown
    • Transferred
    • 3A991.B.1.A
    • 8542.32.00.51
    • 8542.32.00.50
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    S29GL01GS10FAI010 datasheet preview

    S29GL01GS10FAI010 Frequently Asked Questions (FAQs)

    • The recommended operating voltage range for the S29GL01GS10FAI010 is 2.7V to 3.6V.
    • The hold signal (HOLD#) should be asserted low to pause the current operation and enter a low-power state. De-asserting HOLD# resumes the operation.
    • The write protect (WP#) signal is used to prevent accidental writes to the device. When WP# is asserted low, the device is write-protected.
    • The S29GL01GS10FAI010 is a 1Gb (128MB) flash memory device, organized as 2048 blocks of 64KB each.
    • The S29GL01GS10FAI010 has a minimum of 100,000 erase cycles per block.
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