S29GL01GP12FAI010 datasheet by Cypress Semiconductor

S29GL01GP12FAI010 Frequently Asked Questions (FAQs)

• What is the recommended operating voltage range for this flash memory?
  The recommended operating voltage range for the S29GL01GP12FAI010 is 2.7V to 3.6V.
• How do I handle the hold signal (HOLD#) during read and write operations?
  The HOLD# signal should be asserted low to pause the current operation and enter a low-power state. De-asserting HOLD# resumes the operation from where it was paused.
• What is the purpose of the write protection (WP#) pin?
  The WP# pin is used to prevent accidental writes to the status register and the block protection bits. When WP# is low, the status register and block protection bits are write-protected.
• How do I determine the device density and organization?
  The device density and organization can be determined by reading the device ID and revision ID through the ID read command (90h). The density and organization are encoded in the ID bytes.
• What is the maximum number of erase cycles for this device?
  The S29GL01GP12FAI010 has a minimum of 100,000 erase cycles per sector, and a minimum of 10,000 erase cycles per block.